AP18P10GK-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP18P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
BV_DSS
R_DS(ON)
I_D
Description
AP18P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
G
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
-100V
160mΩ
-3.1A
D
S
Absolute Maximum Ratings@T_j=25^oC.(unless otherwise specified)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
-100
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
+20
-3.1
-2.5
-10
2.5
-55 to 150
T_J
Operating Junction Temperature Range
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
45
Unit
℃/W
1
201508052