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AP18N20GI Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP18N20GI
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low Gate Charge
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
200V
170mΩ
18A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
200
±20
18
9.5
60
34.7
0.28
-55 to 150
-55 to 150
Value
3.6
65
Units
V
V
A
A
A
W
W/â
â
â
Units
â/W
â/W
Data and specifications subject to change without notice
1
200805264
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