AP18N20GI-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP18N20GI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP18N20 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BV_DSS
R_DS(ON)
I_D3
200V
170mΩ
18A
GD _S
TO-220CFM(I)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
200
V
+20
V
18
A
9.5
A
60
A
34.7
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.6
65
Units
℃/W
℃/W
1
201412155