AP1802GU Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP1802GU
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
Description
D
D
D
D
2021-8
G
S
S
S
BV_DSS
R_DS(ON)
I_D
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The 2021-8 J-lead package provides good on-resistance performance and
space saving like SC-70-6.
20V
32mΩ
5.8A
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current^1,2
P_D@T_A=25℃
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
20
±12
5.8
4.7
20
1.6
0.013
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
78
Unit
℃/W
Data and specifications subject to change without notice
200118052