AP1801GU Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP1801GU
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
Description
D
D
D
D
2021-8
G
S
S
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The 2021-8 J-lead package provides good on-resistance performance
and space saving like SC-70-6.
BV_DSS
R_DS(ON)
I_D
-20V
70mΩ
-4A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
-20
±12
-4
-3.3
20
1.6
0.013
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
78
Unit
℃/W
Data and specifications subject to change without notice
200111051