AP16T10GH Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP16T10GH
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Surface Mount Package
G
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
R_DS(ON)
I_D
S
100V
185mΩ
7.5A
Description
AP16T10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
G
D _{S TO-252(H)}
Absolute Maximum Ratings@T_j=25^.oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation³
Storage Temperature Range
Operating Junction Temperature Range
100
V
+20
V
7.5
A
4.7
A
20
A
25
W
2
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maixmum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Value
5
62.5
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201408191