AP15TP1R0YT Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP15TP1R0YT
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
D
BV_DSS
-150V
R_DS(ON)
1Ω
I_D3
-1.2A
S
Description
AP15TP1R0 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The PMPAK ^® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
D
S
S
S
G
PMPAK^® 3x3
Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
E_AS
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 10V
Drain Current³, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy⁴
Storage Temperature Range
Operating Junction Temperature Range
-150
V
+25
V
-1.2
A
-1
A
-6
A
3.13
W
6
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
5
40
Unit
℃/W
℃/W
1
201504101