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AP15P15GM-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic
Advanced Power
Electronics Corp.
AP15P15GM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
S
S
S
Description
AP15P15 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
BVDSS
RDS(ON)
ID
-140V
180mΩ
-2.7A
D
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
. Parameter
Rating
VDS
Drain-Source Voltage
-140
VGS
Gate-Source Voltage
+20
ID@TA=25℃
Drain Current, VGS @ 10V3
-2.7
ID@TA=70℃
Drain Current, VGS @ 10V3
-2.1
IDM
Pulsed Drain Current1
-20
PD@TA=25℃
Total Power Dissipation
2.5
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201501142