AP15P10GS-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP15P10GS/P-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
BV_DSS
-100V
▼ Simple Drive Requirement
R_DS(ON)
230mΩ
▼ Fast Switching Characteristic
G
I_D
▼ RoHS Compliant & Halogen-Free
S
-15A
Description
AP15P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP15P10GP) are available for low-profile
applications.
GD _S
G
D
S
TO-263(S)
TO-220(P)
Absolute Maximum Ratings@T_j=25^oC^. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
-100
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
V
-15
A
-9.4
A
-60
A
96
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.3
40
62
Units
℃/W
℃/W
℃/W
1
201409044