AP15N03GH-HF Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP15N03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
▼ RoHS Compliant
D
G
S
Description
AP15N03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
BV_DSS
R_DS(ON)
I_D
30V
80mΩ
15A
G
DS
TO-252(H)
Absolute
Symbol
Maximum
Rating_Ps_ar@_amT_ejt=_er25^o_.C(unless
otherwise specified)
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
30
V
+20
V
15
A
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
9
A
50
A
26
W
0.21
W/℃
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Data & specifications subject to change without notice
Value
4.8
62.5
Unit
℃/W
℃/W
1
201509105