AP1430GEU6-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Embedded Protection Diode

Advanced Power
Electronics Corp.
AP1430GEU6-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
▼ Small Package Outline
▼ Embedded Protection Diode
▼ RoHS Compliant & Halogen Free
S2
G2
D1
SOT-363
D2
G1
S1
BV_DSS
R_DS(ON)
I_D
Description
G1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
SOT-363 package is ultra-small surface mount package and lead
free RoHS compliant.
D1
G2
S1
60V
2.5Ω
230mA
D2
S2
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60
V
+20
V
230
mA
190
mA
1
A
0.277
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
450
Unit
℃/W
1
201511163