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AP13P15GS-HF_14 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement
Advanced Power
Electronics Corp.
AP13P15GS/P-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
GD S
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP13P15GP) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
-150
+20
-13
-8.2
-52
96
0.77
-55 to 150
-55 to 150
-150V
300mΩ
-13A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.3
40
62
Units
℃/W
℃/W
℃/W
1
201107062