|
AP13P15GH Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
|
Advanced Power
Electronics Corp.
AP13P15GH/J
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower On-resistance
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
G
â¼ RoHS Compliant
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as high efficiency switching DC/DC converters and
DC motor control. The through-hole version (AP13P15GJ) is available
for low-profile applications.
BVDSS
RDS(ON)
ID
-150V
300mΩ
-13A
G
D S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-150
±20
-13
-8.2
52
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Max.
Value
1.3
110
Units
â/W
â/W
Data and specifications subject to change without notice
200810051-1/4
|
▷ |