AP1333GU_11 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Simple Gate Drive, Small Package Outline

Advanced Power
Electronics Corp.
AP1333GU
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
D
▼ Small Package Outline
▼ Fast Switching Characteristic
S
Description
SOT-323 _G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, low on-
resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
-20V
800mΩ
-550mA
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+12
-550
-440
-2.5
0.35
0.003
-55 to 150
-55 to 150
Unit
V
V
mA
mA
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
360
Unit
℃/W
1
201105094