AP1332GEV-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lower Gate Charge, Gate Pateded Diode

Advanced Power
Electronics Corp.
AP1332GEV-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Gate Pateded Diode
▼ Small Package Outline
▼ RoHS Compliant & Halogen-Free
S
SC-75 _G
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and cost-
effectiveness.
SC-75 with 1.6x1.6mm very small footprint and suited for hand held
applications.
BV_DSS
R_DS(ON)
I_D
G
20V
0.9Ω
450mA
D
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
Unit
20
V
+6
V
450
mA
360
mA
1
A
0.35
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
420
Unit
℃/W
1
201204252