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AP1332GEU-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – RoHS Compliant & Halogen-Free
Advanced Power
Electronics Corp.
AP1332GEU-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Small Package Outline
▼ RoHS Compliant & Halogen-Free
Description
S
SOT-323 G
AP1332 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
BVDSS
RDS(ON)
ID3
G
20V
0.6Ω
600mA
D
S
Absolute Maximum Ratings@Tj=25.oC(unless otherwise specified)
Symbol
Parameter
Rating
Unit
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
20
V
+8
V
600
mA
470
mA
2.5
A
0.35
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
360
Unit
℃/W
1
201410156