AP11N50I_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

Advanced Power
Electronics Corp.
AP11N50I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP11N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
V_DS @ T_j,max.
R_DS(ON)
I_D
550V
0.68Ω
11A
GD _S
TO-220CFM(I)
Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
500
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V⁴
Drain Current, V_GS @ 10V⁴
Pulsed Drain Current¹
+30
V
11
A
5.6
A
40
A
P_D@T_C=25℃
E_AS
Total Power Dissipation
Single Pulse Avalanche Energy²
40
W
21.8
mJ
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.2
65
Units
℃/W
℃/W
1
201409184