AP10TN135N Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP10TN135N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
▼ Low Gate Charge
▼ RoHS Compliant & Halogen-Free
S
SOT-23 G
Description
AP10TN135 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BV_DSS
R_DS(ON)
I_D
100V
135mΩ
3A
D
G
S
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
100
V
V_GS
Gate-Source Voltage
+20
V
I_D@T_C=25℃
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V³
Drain Current, V_GS @ 10V³
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
A
2.1
A
1.7
A
10
A
1.38
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
45
90
Unit
℃/W
℃/W
1
201504202