|
AP10TN040P Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
|
Advanced Power
Electronics Corp.
AP10TN040P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ 100% Rg & UIS Test
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
G
â¼ RoHS Compliant & Halogen-Free
S
Description
AP41600T4N0s4e0riesearirees fraorme AfrdovmancAeddvaPnocweder Pinonwoevrateindnodveastiegdn
adnedsigsnilicaonnd psrioliceosnsptreocchensoslotgeychtonoalocghyievtoe tahcehileovweestht epolosswibelset
opno-srseisbilsetanocne-reasnisdtafanscte swanitdchifnagstpesrwfoirtcmhainngce.peItrfporromvaidnecse.theIt
dperosvigidneesr twheithdeasnigenxetrrewmiteh aenfficeixetnret mdeeveicffeiciefonrt udseevicine faorwuidse
rinanagweidoef proawngeer aopf pploicwaetironasp.plications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BVDSS
RDS(ON)
ID
100V
40mΩ
31.5A
G
D
S
TO-220(P)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
PD@TA=25â
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
100
V
+20
V
31.5
A
20
A
100
A
89.2
W
2
W
72
mJ
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
62
Units
â/W
â/W
1
201502131
|
▷ |