AP10TN003P Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP10TN003P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% R_g & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP41600T4N0s0e3riesearirees fraorme AfrdovmancAeddvaPnocweder Pinonwoevrateindnodveastiegdn
adnedsigsnilicaonnd psrioliceosnsptreocchensoslotgeychtonoalocghyievtoe tahcehileovweestht epolosswibelset
opno-srseisbilsetanocne-reasnisdtafanscte swanitdchifnagstpesrwfoirtcmhainngce.peItrfporromvaidnecse.theIt
dperosvigidneesr twheithdeasnigenxetrrewmiteh aenfficeixetnret mdeeveicffeiciefonrt udseevicine faorwuidse
rinanagweidoef proawngeer aopf pploicwaetironasp.plications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BV_DSS
R_DS(ON)
I_D4
100V
3mΩ
200A
G
D
S
TO-220(P)
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V_GS @ 10V
Drain Current, V_GS @ 10V⁴
Drain Current, V_GS @ 10V⁴
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy³
Storage Temperature Range
Operating Junction Temperature Range
100
V
+20
V
200
A
120
A
120
A
400
A
227
W
2
W
612
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.55
62
Units
℃/W
℃/W
1
201509072