AP10P10GH-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP10P10GH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
BV_DSS
-100V
R_DS(ON)
500mΩ
G
I_D
-5.7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
G _{D S TO-252(H)}
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters. The through-hole version (AP10P10GJ) is available for
low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation³
Storage Temperature Range
Operating Junction Temperature Range
-100
V
+30
V
-5.7
A
-3.6
A
-15
A
32.5
W
2
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)³
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.85
62.5
110
Units
℃/W
℃/W
℃/W
1
201501123