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AP10N70R Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
â¼ 100% Avalanche Rated Test
â¼ Fast Switching Performance
â¼ Simple Drive Requirement
â¼ RoHS Compliant
AP10N70R/P-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
RDS(ON)
650V
0.6Ω
G
ID
10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
± 30
10
6.8
40
174
1.39
50
10
-55 to 150
-55 to 150
TO-262(R)
TO-220(P)
Units
V
V
A
A
A
W
W/â
mJ
A
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.72
62
Unit
â/W
â/W
Data & specifications subject to change without notice
200519062-1/4
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