AP10N70P_07 Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
AP10N70R/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
R_DS(ON)
600V
0.6Ω
G
I_D
10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
The TO-220 and TO-262 package is widely preferred for commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
± 30
10
6.3
40
174
1.39
50
10
-55 to 150
-55 to 150
TO-262(R)
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.72
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
201022073-1/4