AP1001BSQ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Lead-Free Package, Low Conductance Loss

Advanced Power
Electronics Corp.
AP1001BSQ
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lead-Free Package
▼ Low Conductance Loss
▼ Low Profile ( < 0.7mm )
D
G
S
Description
The AP1001BSQ used the latest APEC Power MOSFET silicon
technology with the advanced technology packaging to provide the
lowest on-resistance loss, low profile and dual sided cooling
compatible.
The GreenFET^TM package is compatible with existing soldering
techniques and is ideal for power application, especially for high
frequency / high efficiency DC-DC converters.
BV_DSS
R_DS(ON)
I_D
30V
6mΩ
15A
GreenFET^TM
DG
S
D
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=100℃
I_D@T_C=25℃
I_DM
P_D@T_A=25℃
P_D@T_A=70℃
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V³
Continuous Drain Current, V_GS @ 10V⁴
Pulsed Drain Current¹
Total Power Dissipation³
Total Power Dissipation³
Total Power Dissipation⁴
Single Pulse Avalanche Energy⁵
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15
12
59
120
2.2
1.4
34
28.8
24
-40 to 150
-40 to 150
SQ
Units
V
V
A
A
A
A
W
W
W
mJ
A
℃
℃
Thermal Data
Rthj-c
Maximum Thermal Resistance, Junction-case⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
3.7
℃/W
58
℃/W
1
201106013