AP09T10GK-HF Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP09T10GK-HF
Preliminary
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Chage
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
Description
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The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
BV_DSS
R_DS(ON)
I_D
100V
300mΩ
2.4A
D
SOT-223
S
D
G
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation³
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
2.4
1.9
10
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient³
Data and specifications subject to change without notice
Value
45
Units
℃/W
1
20110824pre