AP09N90W_09 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP09N90W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche test
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
Description
AP09N90 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO- 3P
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching, ruggedized design and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
G
D
S
900V
1.2Ω
8.6A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
900
+30
8.6
5
30
240
1.92
92
5.2
8.6
-55 to 150
-55 to 150
Value
0.52
40
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Units
℃/W
℃/W
1
200903053