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AP09N90W Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE
AP09N90W
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
BVDSS
RDS(ON)
ID
Description
AP09N90 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO- 3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,
ruggedized design and cost-effectiveness.
G
D
S
900V
1.2Ω
8.6A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
± 30
8.6
5
30
240
1.92
92
5.2
8.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
0.52
40
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200714032