AP09N90CW Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE

AP09N90CW
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Minimize On-resistance
D
▼ Fast Switching
▼ Simple Drive Requirement
G
S
BV_DSS
R_DS(ON)
I_D
Description
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of most
safety specifications.
G
D
S
900V
1.4Ω
7.6A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
± 30
7.6
4.8
25
208
1.6
120
6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
0.60
40
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200731031