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AP09N70P-A_08 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching
▼ Simple Drive Requirement
GG
▼ RoHS Compliant
AP09N70P-A
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
D
BVDSS
650V
RDS(ON)
0.75Ω
ID
9A
S
S
Description
The TO-220 package is widely preferred for all commercial-industrial
applications. The device is suited for DC-DC ,AC-DC converters for
power applications.
G
D
S
TO-220
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
650
±30
9
5
40
156
1.25
305
9
9
-55 to 150
-55 to 150
Value
0.8
62
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
℃/W
1
200804084