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AP09N70I-H-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic | |||
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Advanced Power
Electronics Corp.
â¼ 100% Avalanche Test
â¼ Fast Switching Characteristic
â¼ Simple Drive Requirement
â¼ RoHS Compliant & Halogen-Free
AP09N70I-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
700V
RDS(ON)
0.85Ω
G
ID4
8.3A
S
Description
AP09N70 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
PD@TA=25â
EAS
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
+30
V
8.3
A
5.2
A
40
A
42
W
1.92
W
32
mJ
-55 to 150
â
-55 to 150
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3
65
Units
â/W
â/W
1
201410243
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