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AP09N70I-A_09 Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
â¼ 100% Avalanche Test
â¼ Fast Switching
â¼ Simple Drive Requirement
G
AP09N70I-A
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
650V
RDS(ON)
0.75Ω
ID
9A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
IAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
650
+30
9
5
40
42
0.34
40.5
9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
mJ
A
â
â
Value
3
65
Units
â/W
â/W
1
200906254
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