AP09N20H-HF Datasheet, PDF (1/6 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP09N20H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
D
▼ Fast Switching Characteristics
▼ RoHS Compliant
G
Description
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
200V
380mΩ
8.6A
GD _S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
200
+30
8.6
5.5
36
69
0.55
40
8.6
-55 to 150
-55 to 150
Value
1.8
110
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Unit
℃/W
℃/W
1
200809112