|
AP0904GJB-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic | |||
|
Advanced Power
Electronics Corp.
AP0904GJB-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Low On-resistance
D
â¼ Simple Drive Requirement
â¼ Fast Switching Characteristic
G
â¼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low â¡on-
resistance and cost-effectiveness.
The TO-251S short lead package is preferred for all commercial-
industrial through-hole applications without lead-cutted.
BVDSS
RDS(ON)
ID
GD S
TO-251S(JB)
40V
10mΩ
51A
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
51
32
200
44.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.8
110
Units
â/W
â/W
1
201203291
|
▷ |