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AP0903GYT-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Good Thermal Dissipation
Advanced Power
Electronics Corp.
AP0903GYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Good Thermal Dissipation
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The PMPAK ® 3 x 3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
BVDSS
RDS(ON)
ID
30V
9mΩ
16A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30
V
+20
V
16
A
13
A
40
A
3.5
W
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
35
Units
℃/W
1
201501095