AP0603GMA Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP0603GMA
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ SO-8 similar area footprint and pin assignment
▼ Low Gate Charge
▼ Fast Switching Speed
D
▼ RoHS Compliant
Description
G
S
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
BV_DSS
R_DS(ON)
I_D
30V
6mΩ
75A
D
S _{SS G}
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy⁴
I_AR
T_STG
T_J
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient³
Data & specifications subject to change without notice
Rating
30
±20
75
55
300
62.5
0.5
29
24
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Max.
Max.
Value
2
85
Units
℃/W
℃/W
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