AP05N50I-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
AP05N50I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
500V
R_DS(ON)
1.4Ω
G
I_D4
5.0A
S
Description
AP05N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
GD _S
TO-220CFM(I)
Absolute Maximum Ratings@T_j=25^oC^. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
500
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
T_STG
T_J
Gate-Source Voltage
Drain Current, V_GS @ 10V⁴
Drain Current, V_GS @ 10V⁴
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy²
Storage Temperature Range
Operating Junction Temperature Range
+20
V
5.0
A
2.8
A
18
A
31.3
W
1.92
W
4.5
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.0
65
Unit
℃/W
℃/W
1
201411104