AP05N50EH-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP05N50EH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
D BV_DSS
R_DS(ON)
I_D
S
500V
1.6Ω
5A
Description
AP05N50E series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an
extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP05N50EJ) are available for low-profile
applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
500
V
V_GS
I_D@T_C=25℃
I_DM
Gate-Source Voltage
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
+30
V
5
A
20
A
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
Total Power Dissipation
Total Power Dissipation⁴
Single Pulse Avalanche Energy²
73.5
W
2
W
12.5
mJ
I_AR
T_STG
T_J
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
5
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.7
62.5
110
Unit
℃/W
℃/W
℃/W
1
201501092