AP05G120SW-HF_14 Datasheet, PDF(1/3 Page) Advanced Power Electronics Corp.

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AP05G120SW-HF_14 Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – High Speed Switching

Advanced Power

Electronics Corp.

AP05G120SW-HF

Halogen-Free Product

N-CHANNEL INSULATED GATE

BIPOLAR TRANSISTOR WITH FRD.

Features

â¼ High Speed Switching

â¼ Low Saturation Voltage

VCE(sat)=2.3V@IC=5A

â¼ CO-PAK, IGBT With FRD

â¼ RoHS Compliant & Halogen-Free

TO-3P

Absolute Maximum Ratings

Symbol

Parameter

VCES

VGE

IC@TC=25â

IC@TC=100â

ICM

IF@TC=100â

IFM

PD@TC=25â

TSTG

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Pulsed Collector Current1

Diode Forward Current

Diode Pulse Forward Current

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

Maximum Lead Temp. for Soldering Purposes

, 1/8" from case for 5 seconds .

VCES

Rating

1200

+30

10.5

125

-55 to 150

300

1200V

10.5A

Units

Notes:

1.Pulse width limited by max. junction temperature.

Thermal Data

Symbol

Parameter

Rthj-c(IGBT) Thermal Resistance Junction-Case

Rthj-c(Diode) Thermal Resistance Junction-Case

Rthj-a

Thermal Resistance Junction-Ambient

Value

Units

â/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

IGES

Gate-to-Emitter Leakage Current

VGE=+30V, VCE=0V

- +500 nA

ICES

Collector-Emitter Leakage Current

VCE=1200V, VGE=0V

1 mA

VCE(sat)

Collector-Emitter Saturation Voltage

VGE=15V, IC=5A

- 2.3 2.7 V

VGE(th)

Gate Threshold Voltage

VCE=VGE, IC=250uA

Total Gate Charge

IC=5A

- 33 53 nC

Qge

Gate-Emitter Charge

VCC=600V

- 6.5 - nC

Qgc

Gate-Collector Charge

VGE=15V

- 17.5 - nC

td(on)

Turn-on Delay Time

Rise Time

td(off)

Turn-off Delay Time

Fall Time

Eon

Turn-On Switching Loss

VCC=960V,

Ic=5A,

VGE=15V,

RG=22Î©,

Inductive Load

- 30 - ns

- 13 - ns

- 130 - ns

- 230 460 ns

- 0.3 - mJ

Eoff

Turn-Off Switching Loss

- 0.5 - mJ

Cies

Input Capacitance

VGE=0V

- 680 1088 pF

Coes

Output Capacitance

VCE=30V

- 65 - pF

Cres

Reverse Transfer Capacitance

f=1.0MHz

- 10 - pF

Electrical Characteristics of Diode@Tj=25â(unless otherwise specified)

Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF=6A

IF=20A

IF=10A

di/dt = 100 A/Âµs

- 2.6 3

- 54 - ns

- 138 - nC

Data and specifications subject to change without notice

201210244

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