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AP05G120NSW-HF_14 Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – High Speed Switching
Advanced Power
Electronics Corp.
AP05G120NSW-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
▼ NPT Technology
▼ RoHS Compliant & Halogen-Free
GC
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
IF@TC=100℃
IFM
PD@TC=25℃
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
TO-3P
VCES
IC
Rating
1200
+30
21
10.5
42
8
40
125
-55 to 150
-55 to 150
300
1200V
10.5A
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
1
2
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
Gate-to-Emitter Leakage Current
VGE=+30V, VCE=0V
-
-
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=5A
-
2
VGE=15V, IC=10A
- 2.5
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=10mA
3.5 -
Qg
Total Gate Charge
IC=5A
-
33
Qge
Gate-Emitter Charge
VCC=600V
- 6.5
Qgc
Gate-Collector Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
VGE=15V
VCC=960V,
Ic=5A,
VGE=15V,
RG=22Ω,
Inductive Load
- 16.5
-
8
-
20
-
50
- 400
- 0.7
Eoff
Turn-Off Switching Loss
- 1.1
Cies
Input Capacitance
VGE=0V
- 690
Coes
Output Capacitance
VCE=30V
-
65
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
9
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
VF
Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF=8A
IF=8A
di/dt = 100 A/µs
- 2.5
-
70
- 170
Max.
+500
1
2.7
-
8
53
-
-
-
-
-
800
-
-
1100
-
-
Max.
3.2
-
-
Units
nA
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Units
V
ns
nC
Data and specifications subject to change without notice
1
201205151