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AP04N80R-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP04N80R-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ 100% Avalanche Test
D
â¼ Fast Switching Characteristic
â¼ Simple Drive Requirement
â¼ RoHS Compliant & Halogen-Free
G
S
Description
AP04N80 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. It provide
high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching
design and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-
AC converters and high current high speed switching circuits.
BVDSS
RDS(ON)
ID
800V
4.8Ω
3.2A
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
800
+30
3.2
1.7
12
83.3
4.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.5
62
Units
â/W
â/W
1
201304011
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