AP03N70HJ Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP03N70H/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Speed
▼ Simple Drive Requirement
▼ RoHS Compliant
D
G
S
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP03N70J) is available for low-profile
applications.
BV_DSS
R_DS(ON)
I_D
600V
3.6Ω
3.3A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
G
DS
TO-251(J)
Rating
600
+30
3.3
2.1
13.2
54.3
0.44
85
3.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.3
110
Units
℃/W
℃/W
1
200807093