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AP03N70HJ-H Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Advanced Power
Electronics Corp.
AP03N70H/J-H
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ 100% Avalanche Test
â¼ Fast Switching Speed
â¼ Simple Drive Requirement
â¼ RoHS Compliant
D
G
S
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP03N70J) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
700V
4.4Ω
2.5A
G
D
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
ID@TC=100â
IDM
PD@TC=25â
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+30
2.5
1.6
8
54.3
0.44
31
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
mJ
A
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.3
110
Units
â/W
â/W
Data & specifications subject to change without notice
1
200812114
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