AP03N70H-H Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP03N70H/J-H
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Repetitive Avalanche Rated
D
Fast Switching Speed
Simple Drive Requirement
RoHS Compliant
G
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC
converters. The through-hole version (AP03N70J) is available for low-
profile applications.
BV_DSS
R_DS(ON)
I_D
700V
4.4
2.5A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D@T_C=25
I_D@T_C=100
I_DM
P_D@T_C=25
E_AS
I_AR
T_STG
T_J
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
DS
TO-251(J)
Rating
700
±30
2.5
1.6
8
54.3
0.44
31
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
2.3
110
Units
/W
/W
Data & specifications subject to change without notice
200417062-1/4