|
AP03N40AH-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
|
Advanced Power
Electronics Corp.
â¼ 100% Avalanche Test
â¼ Fast Switching Characteristic
â¼ Simple Drive Requirement
â¼ RoHS Compliant & Halogen-Free
AP03N40AH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
RDS(ON)
400V
2.6Ω
G
ID
2.7A
S
Description
AP03N40A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25â
IDM
PD@TC=25â
PD@TA=25â
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
GD
S
TO-252(H)
Rating
400
+20
2.7
10
44.6
2
-55 to 150
-55 to 150
Units
V
V
A
A
W
W
â
â
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
2.8
62.5
Unit
â/W
â/W
1
201303151
|
▷ |