AP02N90JB Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP02N90JB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP02N90 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-251S short lead package is preferred for all commercial-
industrial through-hole applications without lead-cutted.
BV_DSS
R_DS(ON)
I_D
900V
7.2Ω
1.9A
GDS
TO-251S
Absolute Maximum Ratings@T_j=25^oC_. (unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
Drain-Source Voltage
900
V
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
Gate-Source Voltage
Drain Current, V_GS @ 10V
Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy²
+30
V
1.9
A
1.2
A
6
A
62.5
W
1.13
W
18
mJ
I_AR
T_STG
T_J
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
1.9
A
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
℃/W
℃/W
1
201505271