AP02N90H Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP02N90H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Characteristics
Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
900V
7.2
1.9A
G _DS
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for low-
profile applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25
I_D@T_C=100
I_DM
P_D@T_C=25
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
±30
1.9
1.2
6
62.5
0.5
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
2.0
110
Units
/W
/W
Data & specifications subject to change without notice
200418063-1/4