AP02N90H-HF Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP02N90H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
BV_DSS
R_DS(ON)
I_D
900V
7.2Ω
1.9A
G _DS
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
P_D@T_A=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation⁴
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
+30
1.9
1.2
6
62.5
0.5
2
18
1.9
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/℃
W
mJ
A
℃
℃
Units
℃/W
℃/W
℃/W
1
201008115