AP02N70EJ Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ ESD Improved Capability
▼ Simple Drive Requirement
AP02N70EJ
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV_DSS
G
R_DS(ON)
700V
7Ω
I_D
1.6A
S
Description
AP02N70 from APEC provide the designer with the best combination
of fast switching , low on-resistance and cost-effectiveness.
The TO-251 package is widely preferred for commercial-industrial
through hole applications and suited for AC/DC converters.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy²
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
±20
1.6
1
6.4
45
13
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.8
110
Units
℃/W
℃/W
1
200712241