AP02N60I-A-HF_16 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

Advanced Power
Electronics Corp.
AP02N60I-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP02N60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BV_DSS
R_DS(ON)
I_D
G _DS
650V
8Ω
2A
TO-220CFM(I)
Absolute Maximum Ratings@T_j=25^o_.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V_GS @ 10V⁴
Drain Current, V_GS @ 10V⁴
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
650
+30
2
1.26
3.6
22
0.176
80
V
V
A
A
A
W
W/℃
mJ
I_AR
E_AR
T_STG
T_J
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
A
2
mJ
-55 to 150
℃
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
5.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
201501065