AP02N60H Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power
Electronics Corp.
AP02N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
▼ RoHS Compliant
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP02N60J) is available for low-profile
applications.
BV_DSS
R_DS(ON)
I_D
600V
8Ω
1.6A
G _{D S TO-252(H)}
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
E_AS
I_AR
E_AR
T_STG
T_J
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy²
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±30
1.6
1
6
39
0.31
64
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
3.2
110
Units
℃/W
℃/W
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